SIHB120N60E-GE3
detaildesc

SIHB120N60E-GE3

Vishay Siliconix

Product No:

SIHB120N60E-GE3

Manufacturer:

Vishay Siliconix

Package:

D²PAK (TO-263)

Batch:

-

Datasheet:

pdf

Description:

MOSFET N-CH 600V 25A D2PAK

Quantity:

Delivery:

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Payment:

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In Stock : 913

Update Time: 2024-07-19 18:11:42

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $4.788

    $4.788

  • 10

    $4.0204

    $40.204

  • 100

    $3.252135

    $325.2135

  • 500

    $2.890774

    $1445.387

  • 1000

    $2.475234

    $2475.234

  • 2000

    $2.330692

    $4661.384

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Product Information

Parameter Info

Product Details

User Guide

Mfr Vishay Siliconix
Series E
Package Tube
FET Type N-Channel
Vgs (Max) ±30V
Technology MOSFET (Metal Oxide)
FET Feature -
Mounting Type Surface Mount
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Product Status Active
Vgs(th) (Max) @ Id 5V @ 250µA
Base Product Number SIHB120
Operating Temperature -55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs 120mOhm @ 12A, 10V
Power Dissipation (Max) 179W (Tc)
Supplier Device Package D²PAK (TO-263)
Gate Charge (Qg) (Max) @ Vgs 45 nC @ 10 V
Drain to Source Voltage (Vdss) 600 V
Input Capacitance (Ciss) (Max) @ Vds 1562 pF @ 100 V
Drive Voltage (Max Rds On, Min Rds On) 10V
Current - Continuous Drain (Id) @ 25°C 25A (Tc)