SIHB12N65E-GE3

Vishay Siliconix

Product No:

SIHB12N65E-GE3

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Package:

D²PAK (TO-263)

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Description:

MOSFET N-CH 650V 12A D2PAK

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In Stock : 729

Update Time: 2024-07-19 18:11:42

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Mfr	Vishay Siliconix
Series	-
Package	Tube
FET Type	N-Channel
Vgs (Max)	±30V
Technology	MOSFET (Metal Oxide)
FET Feature	-
Mounting Type	Surface Mount
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Product Status	Active
Vgs(th) (Max) @ Id	4V @ 250µA
Base Product Number	SIHB12
Operating Temperature	-55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs	380mOhm @ 6A, 10V
Power Dissipation (Max)	156W (Tc)
Supplier Device Package	D²PAK (TO-263)
Gate Charge (Qg) (Max) @ Vgs	70 nC @ 10 V
Drain to Source Voltage (Vdss)	650 V
Input Capacitance (Ciss) (Max) @ Vds	1224 pF @ 100 V
Drive Voltage (Max Rds On, Min Rds On)	10V
Current - Continuous Drain (Id) @ 25°C	12A (Tc)