SIRS700DP-T1-GE3
detaildesc

SIRS700DP-T1-GE3

Vishay Siliconix

Product No:

SIRS700DP-T1-GE3

Manufacturer:

Vishay Siliconix

Package:

PowerPAK® SO-8

Batch:

-

Datasheet:

pdf

Description:

N-CHANNEL 100 V (D-S) MOSFET POW

Quantity:

Delivery:

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Payment:

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In Stock : 4814

Update Time: 2024-07-19 18:11:39

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $3.135

    $3.135

  • 10

    $2.6315

    $26.315

  • 100

    $2.128665

    $212.8665

  • 500

    $1.892134

    $946.067

  • 1000

    $1.62014

    $1620.14

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Product Information

Parameter Info

Product Details

User Guide

Mfr Vishay Siliconix
Series TrenchFET® Gen IV
Package Tape & Reel (TR)
FET Type N-Channel
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
FET Feature -
Mounting Type Surface Mount
Package / Case PowerPAK® SO-8
Product Status Active
Vgs(th) (Max) @ Id 4V @ 250µA
Operating Temperature -55°C ~ 150°C (TJ)
Rds On (Max) @ Id, Vgs 3.5mOhm @ 20A, 10V
Power Dissipation (Max) 7.4W (Ta),132W (Tc)
Supplier Device Package PowerPAK® SO-8
Gate Charge (Qg) (Max) @ Vgs 130 nC @ 10 V
Drain to Source Voltage (Vdss) 100 V
Input Capacitance (Ciss) (Max) @ Vds 5950 pF @ 50 V
Drive Voltage (Max Rds On, Min Rds On) 7.5V, 10V
Current - Continuous Drain (Id) @ 25°C 30A (Ta), 127A (Tc)