Infineon Technologies
Product No:
SPB11N60C3ATMA1
Manufacturer:
Package:
PG-TO263-3-2
Batch:
-
Datasheet:
-
Description:
MOSFET N-CH 650V 11A TO263-3
Quantity:
Delivery:
Payment:
Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
1
$3.667
$3.667
10
$3.29555
$32.9555
100
$2.70047
$270.047
500
$2.298848
$1149.424
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Mfr | Infineon Technologies |
Series | CoolMOS™ |
Package | Tape & Reel (TR) |
FET Type | N-Channel |
Vgs (Max) | ±20V |
Technology | MOSFET (Metal Oxide) |
FET Feature | - |
Mounting Type | Surface Mount |
Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Product Status | Not For New Designs |
Vgs(th) (Max) @ Id | 3.9V @ 500µA |
Base Product Number | SPB11N60 |
Operating Temperature | -55°C ~ 150°C (TJ) |
Rds On (Max) @ Id, Vgs | 380mOhm @ 7A, 10V |
Power Dissipation (Max) | 125W (Tc) |
Supplier Device Package | PG-TO263-3-2 |
Gate Charge (Qg) (Max) @ Vgs | 60 nC @ 10 V |
Drain to Source Voltage (Vdss) | 650 V |
Input Capacitance (Ciss) (Max) @ Vds | 1200 pF @ 25 V |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Current - Continuous Drain (Id) @ 25°C | 11A (Tc) |