TJ200F04M3L,LXHQ
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TJ200F04M3L,LXHQ

Toshiba Semiconductor and Storage

Product No:

TJ200F04M3L,LXHQ

Package:

TO-220SM(W)

Batch:

-

Datasheet:

-

Description:

MOSFET P-CH 40V 200A TO220SM

Quantity:

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Product Information

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Product Details

User Guide

Mfr Toshiba Semiconductor and Storage
Series U-MOSVI
Package Tape & Reel (TR)
FET Type P-Channel
Vgs (Max) +10V, -20V
Technology MOSFET (Metal Oxide)
FET Feature -
Mounting Type Surface Mount
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Product Status Active
Vgs(th) (Max) @ Id 3V @ 1mA
Base Product Number TJ200F04
Operating Temperature 175°C
Rds On (Max) @ Id, Vgs 1.8mOhm @ 100A, 10V
Power Dissipation (Max) 375W (Tc)
Supplier Device Package TO-220SM(W)
Gate Charge (Qg) (Max) @ Vgs 460 nC @ 10 V
Drain to Source Voltage (Vdss) 40 V
Input Capacitance (Ciss) (Max) @ Vds 1280 pF @ 10 V
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Current - Continuous Drain (Id) @ 25°C 200A (Ta)