TK16E60W,S1VX

Toshiba Semiconductor and Storage

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TK16E60W,S1VX

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TO-220

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Description:

MOSFET N-CH 600V 15.8A TO220

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In Stock : 46

Update Time: 2024-07-19 18:12:23

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Mfr	Toshiba Semiconductor and Storage
Series	DTMOSIV
Package	Tube
FET Type	N-Channel
Vgs (Max)	±30V
Technology	MOSFET (Metal Oxide)
FET Feature	-
Mounting Type	Through Hole
Package / Case	TO-220-3
Product Status	Active
Vgs(th) (Max) @ Id	3.7V @ 790µA
Base Product Number	TK16E60
Operating Temperature	150°C (TJ)
Rds On (Max) @ Id, Vgs	190mOhm @ 7.9A, 10V
Power Dissipation (Max)	130W (Tc)
Supplier Device Package	TO-220
Gate Charge (Qg) (Max) @ Vgs	38 nC @ 10 V
Drain to Source Voltage (Vdss)	600 V
Input Capacitance (Ciss) (Max) @ Vds	1350 pF @ 300 V
Drive Voltage (Max Rds On, Min Rds On)	10V
Current - Continuous Drain (Id) @ 25°C	15.8A (Ta)