TK31V60W5,LVQ
detaildesc

TK31V60W5,LVQ

Toshiba Semiconductor and Storage

Product No:

TK31V60W5,LVQ

Package:

4-DFN-EP (8x8)

Batch:

-

Datasheet:

-

Description:

MOSFET N-CH 600V 30.8A 4DFN

Quantity:

Delivery:

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Payment:

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In Stock : 13059

Update Time: 2024-07-19 18:12:24

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $3.933

    $3.933

  • 10

    $3.3003

    $33.003

  • 100

    $2.67007

    $267.007

  • 500

    $2.373423

    $1186.7115

  • 1000

    $2.03224

    $2032.24

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Product Information

Parameter Info

Product Details

User Guide

Mfr Toshiba Semiconductor and Storage
Series DTMOSIV
Package Tape & Reel (TR)
FET Type N-Channel
Vgs (Max) ±30V
Technology MOSFET (Metal Oxide)
FET Feature -
Mounting Type Surface Mount
Package / Case 4-VSFN Exposed Pad
Product Status Active
Vgs(th) (Max) @ Id 4.5V @ 1.5mA
Base Product Number TK31V60
Operating Temperature 150°C (TA)
Rds On (Max) @ Id, Vgs 109mOhm @ 15.4A, 10V
Power Dissipation (Max) 240W (Tc)
Supplier Device Package 4-DFN-EP (8x8)
Gate Charge (Qg) (Max) @ Vgs 105 nC @ 10 V
Drain to Source Voltage (Vdss) 600 V
Input Capacitance (Ciss) (Max) @ Vds 3000 pF @ 300 V
Drive Voltage (Max Rds On, Min Rds On) 10V
Current - Continuous Drain (Id) @ 25°C 30.8A (Ta)