TK58A06N1,S4X

Toshiba Semiconductor and Storage

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TK58A06N1,S4X

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TO-220SIS

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Description:

MOSFET N-CH 60V 58A TO220SIS

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In Stock : 4

Update Time: 2024-07-19 18:12:24

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Mfr	Toshiba Semiconductor and Storage
Series	U-MOSVIII-H
Package	Tube
FET Type	N-Channel
Vgs (Max)	±20V
Technology	MOSFET (Metal Oxide)
FET Feature	-
Mounting Type	Through Hole
Package / Case	TO-220-3 Full Pack
Product Status	Active
Vgs(th) (Max) @ Id	4V @ 500µA
Base Product Number	TK58A06
Operating Temperature	150°C (TJ)
Rds On (Max) @ Id, Vgs	5.4mOhm @ 29A, 10V
Power Dissipation (Max)	35W (Tc)
Supplier Device Package	TO-220SIS
Gate Charge (Qg) (Max) @ Vgs	46 nC @ 10 V
Drain to Source Voltage (Vdss)	60 V
Input Capacitance (Ciss) (Max) @ Vds	3400 pF @ 30 V
Drive Voltage (Max Rds On, Min Rds On)	10V
Current - Continuous Drain (Id) @ 25°C	58A (Tc)