TK8A65D(STA4,Q,M)
detaildesc

TK8A65D(STA4,Q,M)

Toshiba Semiconductor and Storage

Product No:

TK8A65D(STA4,Q,M)

Package:

TO-220SIS

Batch:

-

Datasheet:

-

Description:

MOSFET N-CH 650V 8A TO220SIS

Quantity:

Delivery:

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Payment:

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In Stock : 58

Update Time: 2024-07-19 18:12:24

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $2.1945

    $2.1945

  • 10

    $1.9684

    $19.684

  • 100

    $1.581845

    $158.1845

  • 500

    $1.299638

    $649.819

  • 1000

    $1.076844

    $1076.844

  • 2000

    $1.002582

    $2005.164

  • 5000

    $0.965447

    $4827.235

  • 10000

    $0.928321

    $9283.21

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Product Information

Parameter Info

Product Details

User Guide

Mfr Toshiba Semiconductor and Storage
Series π-MOSVII
Package Bulk
FET Type N-Channel
Vgs (Max) ±30V
Technology MOSFET (Metal Oxide)
FET Feature -
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Product Status Active
Vgs(th) (Max) @ Id 4V @ 1mA
Base Product Number TK8A65
Operating Temperature 150°C (TJ)
Rds On (Max) @ Id, Vgs 840mOhm @ 4A, 10V
Power Dissipation (Max) 45W (Tc)
Supplier Device Package TO-220SIS
Gate Charge (Qg) (Max) @ Vgs 25 nC @ 10 V
Drain to Source Voltage (Vdss) 650 V
Input Capacitance (Ciss) (Max) @ Vds 1350 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On) 10V
Current - Continuous Drain (Id) @ 25°C 8A (Ta)