TPH2900ENH,L1Q
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TPH2900ENH,L1Q

Toshiba Semiconductor and Storage

Product No:

TPH2900ENH,L1Q

Package:

8-SOP Advance (5x5)

Batch:

-

Datasheet:

-

Description:

MOSFET N-CH 200V 33A 8SOP

Quantity:

Delivery:

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Payment:

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In Stock : 14274

Update Time: 2024-07-19 18:12:24

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $2.356

    $2.356

  • 10

    $2.1204

    $21.204

  • 100

    $1.70449

    $170.449

  • 500

    $1.400395

    $700.1975

  • 1000

    $1.16032

    $1160.32

  • 2000

    $1.080302

    $2160.604

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Product Information

Parameter Info

Product Details

User Guide

Mfr Toshiba Semiconductor and Storage
Series U-MOSVIII-H
Package Tape & Reel (TR)
FET Type N-Channel
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
FET Feature -
Mounting Type Surface Mount
Package / Case 8-PowerVDFN
Product Status Active
Vgs(th) (Max) @ Id 4V @ 1mA
Base Product Number TPH2900
Operating Temperature 150°C (TJ)
Rds On (Max) @ Id, Vgs 29mOhm @ 16.5A, 10V
Power Dissipation (Max) 78W (Tc)
Supplier Device Package 8-SOP Advance (5x5)
Gate Charge (Qg) (Max) @ Vgs 22 nC @ 10 V
Drain to Source Voltage (Vdss) 200 V
Input Capacitance (Ciss) (Max) @ Vds 2200 pF @ 100 V
Drive Voltage (Max Rds On, Min Rds On) 10V
Current - Continuous Drain (Id) @ 25°C 33A (Ta)