TPN19008QM,LQ
detaildesc

TPN19008QM,LQ

Toshiba Semiconductor and Storage

Product No:

TPN19008QM,LQ

Package:

8-TSON Advance (3.1x3.1)

Batch:

-

Datasheet:

-

Description:

MOSFET N-CH 80V 34A 8TSON

Quantity:

Delivery:

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Payment:

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In Stock : 1032

Update Time: 2024-07-19 18:12:24

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $0.627

    $0.627

  • 10

    $0.5396

    $5.396

  • 100

    $0.373445

    $37.3445

  • 500

    $0.312075

    $156.0375

  • 1000

    $0.265592

    $265.592

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Product Information

Parameter Info

Product Details

User Guide

Mfr Toshiba Semiconductor and Storage
Series U-MOSX-H
Package Tape & Reel (TR)
FET Type N-Channel
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
FET Feature -
Mounting Type Surface Mount
Package / Case 8-PowerVDFN
Product Status Active
Vgs(th) (Max) @ Id 3.5V @ 200µA
Base Product Number TPN19008
Operating Temperature 175°C
Rds On (Max) @ Id, Vgs 19mOhm @ 17A, 10V
Power Dissipation (Max) 630mW (Ta), 57W (Tc)
Supplier Device Package 8-TSON Advance (3.1x3.1)
Gate Charge (Qg) (Max) @ Vgs 16 nC @ 10 V
Drain to Source Voltage (Vdss) 80 V
Input Capacitance (Ciss) (Max) @ Vds 1400 pF @ 40 V
Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
Current - Continuous Drain (Id) @ 25°C 34A (Tc)