TPN2R703NL,L1Q
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TPN2R703NL,L1Q

Toshiba Semiconductor and Storage

Product No:

TPN2R703NL,L1Q

Package:

8-TSON Advance (3.1x3.1)

Batch:

-

Datasheet:

-

Description:

MOSFET N-CH 30V 45A 8TSON

Quantity:

Delivery:

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Payment:

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In Stock : 4995

Update Time: 2024-07-19 18:12:24

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $1.102

    $1.102

  • 10

    $0.988

    $9.88

  • 100

    $0.770165

    $77.0165

  • 500

    $0.636253

    $318.1265

  • 1000

    $0.502303

    $502.303

  • 2000

    $0.468816

    $937.632

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Product Information

Parameter Info

Product Details

User Guide

Mfr Toshiba Semiconductor and Storage
Series U-MOSVIII-H
Package Tape & Reel (TR)
FET Type N-Channel
Vgs (Max) ±20V
Technology MOSFET (Metal Oxide)
FET Feature -
Mounting Type Surface Mount
Package / Case 8-PowerVDFN
Product Status Active
Vgs(th) (Max) @ Id 2.3V @ 300µA
Base Product Number TPN2R703
Operating Temperature 150°C (TJ)
Rds On (Max) @ Id, Vgs 2.7mOhm @ 22.5A, 10V
Power Dissipation (Max) 700mW (Ta), 42W (Tc)
Supplier Device Package 8-TSON Advance (3.1x3.1)
Gate Charge (Qg) (Max) @ Vgs 21 nC @ 10 V
Drain to Source Voltage (Vdss) 30 V
Input Capacitance (Ciss) (Max) @ Vds 2100 pF @ 15 V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Current - Continuous Drain (Id) @ 25°C 45A (Tc)