TPN4R303NL,L1Q

Toshiba Semiconductor and Storage

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TPN4R303NL,L1Q

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8-TSON Advance (3.1x3.1)

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Description:

MOSFET N-CH 30V 40A 8TSON

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In Stock : 4830

Update Time: 2024-07-19 18:12:24

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Mfr	Toshiba Semiconductor and Storage
Series	U-MOSVIII-H
Package	Tape & Reel (TR)
FET Type	N-Channel
Vgs (Max)	±20V
Technology	MOSFET (Metal Oxide)
FET Feature	-
Mounting Type	Surface Mount
Package / Case	8-PowerVDFN
Product Status	Active
Vgs(th) (Max) @ Id	2.3V @ 200µA
Base Product Number	TPN4R303
Operating Temperature	150°C (TJ)
Rds On (Max) @ Id, Vgs	4.3mOhm @ 20A, 10V
Power Dissipation (Max)	700mW (Ta), 34W (Tc)
Supplier Device Package	8-TSON Advance (3.1x3.1)
Gate Charge (Qg) (Max) @ Vgs	14.8 nC @ 10 V
Drain to Source Voltage (Vdss)	30 V
Input Capacitance (Ciss) (Max) @ Vds	1400 pF @ 15 V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C	40A (Tc)