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TRS10E65H,S1Q
Toshiba Semiconductor and Storage
Product No:
TRS10E65H,S1Q
Manufacturer:
Package:
TO-220-2L
Batch:
-
Datasheet:
-
Description:
G3 SIC-SBD 650V 10A TO-220-2L
Quantity:
Delivery:
Payment:
In Stock : 320 
Update Time: 2024-07-19 18:12:28
Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
1
$2.7455
$2.7455
10
$2.30185
$23.0185
100
$1.86181
$186.181
500
$1.654938
$827.469
1000
$1.417048
$1417.048
2000
$1.334304
$2668.608
5000
$1.280125
$6400.625
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Product Information
Parameter Info
Product Details
User Guide
| Mfr | Toshiba Semiconductor and Storage |
| Speed | No Recovery Time > 500mA (Io) |
| Series | - |
| Package | Tube |
| Technology | SiC (Silicon Carbide) Schottky |
| Mounting Type | Through Hole |
| Package / Case | TO-220-2 |
| Product Status | Active |
| Capacitance @ Vr, F | 649pF @ 1V, 1MHz |
| Supplier Device Package | TO-220-2L |
| Reverse Recovery Time (trr) | 0 ns |
| Current - Reverse Leakage @ Vr | 100 µA @ 650 V |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Current - Average Rectified (Io) | 10A |
| Operating Temperature - Junction | 175°C |
| Voltage - Forward (Vf) (Max) @ If | 1.35 V @ 10 A |
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