Home / Diode Arrays / TRS12N65FB,S1F(S
TRS12N65FB,S1F(S
detaildesc

TRS12N65FB,S1F(S

Toshiba Semiconductor and Storage

Product No:

TRS12N65FB,S1F(S

Package:

TO-247

Batch:

-

Datasheet:

-

Description:

DODE SCHOTTKY 650V TO247

Quantity:

Delivery:

1.webp 4.webp 5.webp 2.webp 3.webp

Payment:

paypal.webp paypal02.webp paypal03.webp paypal04.webp

In Stock : Please Inquiry

Update Time: -

Please send RFQ , we will respond immediately.

Product Information

Parameter Info

Product Details

User Guide

Mfr Toshiba Semiconductor and Storage
Speed No Recovery Time > 500mA (Io)
Series -
Package Tube
Technology SiC (Silicon Carbide) Schottky
Mounting Type Through Hole
Package / Case TO-247-3
Product Status Active
Base Product Number TRS12N65
Diode Configuration 1 Pair Common Cathode
Supplier Device Package TO-247
Reverse Recovery Time (trr) 0 ns
Current - Reverse Leakage @ Vr 90 µA @ 650 V
Voltage - DC Reverse (Vr) (Max) 650 V
Operating Temperature - Junction 175°C (Max)
Voltage - Forward (Vf) (Max) @ If 1.7 V @ 6 A
Current - Average Rectified (Io) (per Diode) 6A (DC)