TRS3E65F,S1Q
detaildesc

TRS3E65F,S1Q

Toshiba Semiconductor and Storage

Product No:

TRS3E65F,S1Q

Package:

TO-220-2L

Batch:

-

Datasheet:

-

Description:

DIODE SIL CARB 650V 3A TO220-2L

Quantity:

Delivery:

1.webp 4.webp 5.webp 2.webp 3.webp

Payment:

paypal.webp paypal02.webp paypal03.webp paypal04.webp

In Stock : 12

Update Time: 2024-07-19 18:12:28

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $1.8145

    $1.8145

  • 10

    $1.5048

    $15.048

  • 100

    $1.197475

    $119.7475

  • 500

    $1.013232

    $506.616

  • 1000

    $0.859712

    $859.712

  • 2000

    $0.816724

    $1633.448

  • 5000

    $0.78602

    $3930.1

  • 10000

    $0.76

    $7600

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Product Information

Parameter Info

Product Details

User Guide

Mfr Toshiba Semiconductor and Storage
Speed No Recovery Time > 500mA (Io)
Series -
Package Tube
Technology SiC (Silicon Carbide) Schottky
Mounting Type Through Hole
Package / Case TO-220-2
Product Status Active
Base Product Number TRS3E65
Capacitance @ Vr, F 12pF @ 650V, 1MHz
Supplier Device Package TO-220-2L
Reverse Recovery Time (trr) 0 ns
Current - Reverse Leakage @ Vr 20 µA @ 650 V
Voltage - DC Reverse (Vr) (Max) 650 V
Current - Average Rectified (Io) 3A
Operating Temperature - Junction 175°C (Max)
Voltage - Forward (Vf) (Max) @ If 1.6 V @ 3 A