Home / Single Diodes / VS-3C04ET07S2L-M3
VS-3C04ET07S2L-M3
detaildesc

VS-3C04ET07S2L-M3

Vishay General Semiconductor - Diodes Division

Product No:

VS-3C04ET07S2L-M3

Package:

TO-263AB (D²PAK)

Batch:

-

Datasheet:

pdf

Description:

650 V POWER SIC GEN 3 MERGED PIN

Quantity:

Delivery:

1.webp 4.webp 5.webp 2.webp 3.webp

Payment:

paypal.webp paypal02.webp paypal03.webp paypal04.webp

In Stock : 1580

Update Time: 2024-07-19 18:12:35

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $2.5175

    $2.5175

  • 10

    $2.09475

    $20.9475

  • 100

    $1.66706

    $166.706

Not the price you want? Send RFQ Now and we'll contact you ASAP.

Product Information

Parameter Info

Product Details

User Guide

Mfr Vishay General Semiconductor - Diodes Division
Speed No Recovery Time > 500mA (Io)
Series -
Package Tape & Reel (TR)
Technology SiC (Silicon Carbide) Schottky
Mounting Type Surface Mount
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Product Status Active
Capacitance @ Vr, F 175pF @ 1V, 1MHz
Supplier Device Package TO-263AB (D²PAK)
Reverse Recovery Time (trr) 0 ns
Current - Reverse Leakage @ Vr 25 µA @ 650 V
Voltage - DC Reverse (Vr) (Max) 650 V
Current - Average Rectified (Io) 4A
Operating Temperature - Junction -55°C ~ 175°C
Voltage - Forward (Vf) (Max) @ If 1.5 V @ 4 A